1.6 ghz satcom applications rf & microwave transistors .250 x .320 2lfl (m170) epoxy sealed . 1.65 ghz . 28 volts . efficiency 50% min. . class c operation . common base . input/output matching . p out = 24 w min. with 9.0 db gain description the SD1888-03 is a 28 v class c silicon npn transistor designed for inmarsat and other 1.65 ghz satcom applications. a gold metallized emit- ter-ballasted die geometry is employed providing high gain and efficiency while ensuring long term reliability and ruggedness under severe operating conditions. SD1888-03 is packaged in a cost-ef- fective epoxy sealed housing pin connection branding 1888-3 order code SD1888-03 absolute maximum ratings (t case = 25 c) symbol parameter value unit v cbo collector-base voltage 45 v v ceo collector-emitter voltage 12 v v ebo emitter-base voltage 3.0 v i c device current 2.6 a p diss power dissipation 50 w t j junction temperature +200 c t stg storage temperature - 65 to +150 c r th(j-c) junction-case thermal resistance 3.5 c/w SD1888-03 1. collector 3. base 2. emitter thermal data july 1993 1/4 .com .com .com .com 4 .com u datasheet
electrical specifications (t case = 25 c) symbol test conditions value unit min. typ. max. p out f = 1.65 ghz p in = 3.0 w v ce = 28 v 24 e e w g p f = 1.65 ghz p in = 3.0 w v ce = 28 v 9.0 e e db h cf = 1.65 ghz p in = 3.0 w v ce = 28 v 50 e e % static symbol test conditions value unit min. typ. max. bv cbo i c = 6ma i e = 0ma 45 e e v bv ceo i c = 6ma i b = 0ma 12 e e v bv ebo i e = 6ma i c = 0 ma 3.0 e e v h fe v ce = 5v i c = 1.2 a 15 e 150 e dynamic typical performance power output & efficiency vs power input SD1888-03 2/4 .com .com .com .com .com 4 .com u datasheet
typical input impedance typical collector load impedance impedance data z in z cl freq. z in ( w )z cl ( w ) 1600 mhz 9.0 + j 14.0 11.0 + j 2.0 1650 mhz 11.5 + j 12.0 9.0 + j 4.0 1700 mhz 23.0 + j 8.0 8.0 + j 5.5 c1 : 1500pf feedtrhu capacitor erie c2, c3 : 0.4 - 2.5pf trim capacitor johanson gigatrim c4 : 100pf atc chip capacitor l1, l2 : rf chokes; 3 turns #22 wire .100o diameter test circuit SD1888-03 3/4 .com .com .com .com .com 4 .com u datasheet
package mechanical data ref.: dwg. no.12-0170 information furnished is believed to be accurate and reliable. however, sgs-thomson microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. no license is granted by implication or otherwise under any patent or patent rights of sgs-thomson microelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. sgs-thomson microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of sgs-thomson microelectonics. ? 1994 sgs-thomson microelectronics - all rights reserved sgs-thomson microelectronics group of companies australia - brazil - france - germany - hong kong - italy - japan - korea - malaysia - malta - morocco - the netherlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a SD1888-03 4/4 .com .com .com .com 4 .com u datasheet
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